Craig Riddet: search on Z-Library

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1

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

Donetti, Luca, Sampedro, Carlos, Gamiz, Francisco, Godoy, Andres, Garcia-Ruiz, Francisco J., Towiez, Ewan, Georgiev, Vihar P., Amoroso, Salvatore Maria, Riddet, Craig, Asenov, Asen

Year:

2015

Language:

english

File:

PDF, 963 KB

english, 2015

2

[IEEE 2014 International Workshop on Computational Electronics (IWCE) - Paris, France (2014.6.3-2014.6.6)] 2014 International Workshop on Computational Electronics (IWCE) - Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study

Amoroso, Salvatore Maria, Georgiev, Vihar P., Towie, Ewan, Riddet, Craig, Asenov, Asen

Year:

2014

Language:

english

File:

PDF, 3.36 MB

english, 2014

3

Boundary conditions for Density Gradient corrections in

Craig Riddet, Andrew R. Brown, Scott Roy, Asen Asenov

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 522 KB

english, 2008

4

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Monte Carlo Simulations of Ge Implant Free Quantum Well FETs - The Role of Substrate and Channel Orientation

Chan, Kah Hou, Riddet, Craig, Watling, Jeremy R., Asenov, Asen

Year:

2012

Language:

english

File:

PDF, 205 KB

english, 2012

5

Simulation of hole-mobility in doped relaxed and strained Ge layers

Watling, Jeremy R., Riddet, Craig, Chan, Morgan Kah H., Asenov, Asen

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 872 KB

english, 2010

6

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Comparison of raised source/drain Implant-Free Quantum-Well and Tri-gate MOSFETs using 3D Monte Carlo simulation

Towie, Ewan A., Riddet, Craig, Asenov, Asen

Year:

2013

Language:

english

File:

PDF, 3.62 MB

english, 2013

7

[ACM Press the 50th Annual Design Automation Conference - Austin, Texas (2013.05.29-2013.06.07)] Proceedings of the 50th Annual Design Automation Conference on - DAC '13 - Predicting future technology performance

Asenov, Asen, Alexander, Craig, Riddet, Craig, Towie, Ewan

Year:

2013

Language:

english

File:

PDF, 669 KB

english, 2013

8

Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium

Riddet, Craig, Watling, Jeremy R, Chan, KahHou, Asenov, Asen

Journal:

Journal of Physics Conference Series

Year:

2010

Language:

english

File:

PDF, 874 KB

english, 2010

9

[IEEE 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Toulouse, France (2016.10.9-2016.10.12)] 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

Georgiev, Vihar P., Mirza, Muhammad M., Dochioiu, Alexandru-Iustin, Lema, Fikru-Adamu, Amoroso, Slavatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A., Asenov, Asen, Paul, Douglas J.

Year:

2016

Language:

english

File:

PDF, 647 KB

english, 2016

10

Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach

Brahim Benbakhti, KahHou Chan, Ewan Towie, Karol Kalna, Craig Riddet, Xingsheng Wang, Geert Eneman, Geert Hellings, Kristin De Meyer, Marc Meuris, Asen Asenov

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 961 KB

english, 2011

11

Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors

Wang, Yijiao, Al-Ameri, Talib, Wang, Xingsheng, Georgiev, Vihar P., Towie, Ewan, Amoroso, Salvatore Maria, Brown, Andrew R., Cheng, Binjie, Reid, David, Riddet, Craig, Shifren, Lucian, Sinha, Saurabh,

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.87 MB

english, 2015

12

[IEEE 2011 12th International Conference on Ultimate Integration on Silicon (ULIS) - Cork, Ireland (2011.03.14-2011.03.16)] Ulis 2011 Ultimate Integration on Silicon - Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width

Chan, KahHou, Benbakhti, Brahim, Riddet, Craig, Watling, Jeremy, Asenov, Asen

Year:

2011

Language:

english

File:

PDF, 816 KB

english, 2011

13

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Performance evaluation of p-channel FinFETs using 3D ensemble Monte Carlo simulation

Riddet, Craig, Towie, Ewan A., Asenov, Asen

Year:

2013

Language:

english

File:

PDF, 742 KB

english, 2013

14

Use of density gradient quantum corrections in the simulation of

Andrew R. Brown, Jeremy R. Watling, Gareth Roy, Craig Riddet, Craig L. Alexander, Urban Kovac, Antonio Martinez, Asen Asenov

Journal:

Journal of Computational Electronics

Year:

2010

Language:

english

File:

PDF, 1.04 MB

english, 2010

15

Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels

Georgiev, Vihar P., Mirza, Muhammad, Dochioiu, Alexandru-Iustin, Adamu-Lema, Fikru, Amoroso, Salvatore M., Towie, Ewan, Riddet, Craig, MacLaren, Donald A., Asenov, Asen, Paul, Douglas J.

Journal:

IEEE Transactions on Nanotechnology

Year:

2017

Language:

english

File:

PDF, 4.86 MB

english, 2017

16

Simulation of hole-mobility in doped relaxed and strained Ge

Jeremy R. Watling, Craig Riddet, Kah H. Chan, Asen Asenov

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

17

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - PDK development for 10nm III-V/Ge IFQW CMOS technology including statistical variability

Liao, Si-Yu, Towie, Ewan A., Balaz, Daniel, Riddet, Craig, Cheng, Binjie, Asenov, Asen

Year:

2013

Language:

english

File:

PDF, 4.28 MB

english, 2013

18

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Riddet, Craig, Brown, Andrew R., Alexander, Craig L., Watling, Jeremy R., Roy, Scott, Asenov, Asen

Journal:

IEEE Transactions on Nanotechnology

Year:

2007

Language:

english

File:

PDF, 1.45 MB

english, 2007

19

Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

Amoroso, Salvatore Maria, Georgiev, Vihar P., Gerrer, Louis, Towie, Ewan, Wang, Xingsheng, Riddet, Craig, Brown, Andrew Robert, Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.05 MB

english, 2014

20

Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques

Asen Asenov, Andrew R. Brown, Gareth Roy, Binjie Cheng, Craig Alexander, Craig Riddet, Urban Kovac, Antonio Martinez, Natalia Seoane, Scott Roy

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 5.47 MB

english, 2009

21

Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

Adamu-Lema, Fikru, Wang, Xingsheng, Amoroso, Salvatore Maria, Riddet, Craig, Cheng, Binjie, Shifren, Lucian, Aitken, Robert, Sinha, Saurahb, Yeric, Greg, Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.61 MB

english, 2014

22

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Convergence properties of density gradient quantum corrections in 3D ensemble Monte Carlo Simulations

Riddet, Craig, Asenov, Asen

Year:

2008

Language:

english

File:

PDF, 1019 KB

english, 2008

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